TIP36E datasheet(1/2 Pages) ISC

部品番号	TIP36E

部品情報	isc Silicon PNP Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

TIP36E

DESCRIPTION

·DC Current Gain-

: hFE= 25(Min)@IC = -1.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -140V(Min)

·Complement to Type TIP35E

·Current Gain-Bandwidth Product-

: fT= 3.0MHz(Min)@IC= -1.0A

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-180

V

VCEO

Collector-Emitter Voltage

-140

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-25

A

ICM

Collector Current-peak

-40

A

IB

B

Base Current

-5

A

PC

Collector Power Dissipation@ TC=25℃

125

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

isc Website：www.iscsemi.cn

同様の部品番号 - TIP36E

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	TIP36E	164Kb / 3P	POWER TRANSISTORS(25A,120-160V,125W)

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