データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

Preview PDF HTML

TSM4946DCSRL データシート(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

部品番号 TSM4946DCSRL
部品情報  60V Dual N-Channel MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  TSC [Taiwan Semiconductor Company, Ltd]
ホームページ  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSM4946DCSRL データシート(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

  TSM4946DCSRL Datasheet HTML 1Page - Taiwan Semiconductor Company, Ltd TSM4946DCSRL Datasheet HTML 2Page - Taiwan Semiconductor Company, Ltd TSM4946DCSRL Datasheet HTML 3Page - Taiwan Semiconductor Company, Ltd TSM4946DCSRL Datasheet HTML 4Page - Taiwan Semiconductor Company, Ltd TSM4946DCSRL Datasheet HTML 5Page - Taiwan Semiconductor Company, Ltd TSM4946DCSRL Datasheet HTML 6Page - Taiwan Semiconductor Company, Ltd  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
TSM4946D
60V Dual N-Channel MOSFET
2/2
Version: A09
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
BVDSS
60
--
--
V
Gate Threshold Voltage
VDS = VGS, ID = 250µA
VGS(TH)
1
--
3
V
Gate Body Leakage
VGS = ±20V, VDS = 0V
IGSS
--
--
±100
nA
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
IDSS
--
--
2
µA
On-State Drain Current
a
VDS = 5V, VGS = 10V
ID(ON)
20
--
--
A
VGS = 10V, ID = 4.5A
--
45
55
Drain-Source On-State Resistance
a
VGS = 4.5V, ID = 3.9A
RDS(ON)
--
55
75
mΩ
Forward Transconductance
a
VDS = 15V, ID = 4.5A
gfs
--
13
--
S
Diode Forward Voltage
IS = 2A, VGS = 0V
VSD
--
0.9
1.2
V
Dynamic
b
Total Gate Charge
Qg
--
19
30
Gate-Source Charge
Qgs
--
4
--
Gate-Drain Charge
VDS = 30V, ID = 4.5A,
VGS = 10V
Qgd
--
3
--
nC
Input Capacitance
Ciss
--
910
--
Output Capacitance
Coss
--
145
--
Reverse Transfer Capacitance
VDS = 24V, VGS = 0V,
f = 1.0MHz
Crss
--
67
--
pF
Switching
c
Turn-On Delay Time
td(on)
--
13
20
Turn-On Rise Time
tr
--
11
20
Turn-Off Delay Time
td(off)
--
36
60
Turn-Off Fall Time
VDD = 30V, RL = 30Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
tf
--
11
20
nS
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.



Html Pages

1 2 3 4 5 6


データシート ダウンロード

Go To PDF Page


リンク URL



ALLDATASHEETはお客様のビジネスに役立ちますか？  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   データシートへのリンク    |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com