TSM4946DCSRL datasheet(1/6 Pages) TSC

部品番号	TSM4946DCSRL

部品情報	60V Dual N-Channel MOSFET

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メーカー	TSC [Taiwan Semiconductor Company, Ltd]

ホームページ	http://www.taiwansemi.com

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TSM4946D

60V Dual N-Channel MOSFET

1/1

Version: A09

SOP-8

Features

●

Advance Trench Process Technology

●

High Density Cell Design for Ultra Low On-resistance

Application

●

High-Side DC/DC Conversion

●

Notebook

●

Sever

Ordering Information

Part No.

Package

Packing

TSM4946DCS RL

SOP-8

2.5Kpcs / 13” Reel

TSM4946DCS RLG

SOP-8

2.5Kpcs / 13” Reel

Note: “G” denote for Green Product

Absolute Maximum Rating (Ta = 25oC unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

4.5

A

Pulsed Drain Current

IDM

30

A

Continuous Source Current (Diode Conduction)

a,b

IS

2

A

Ta = 25

oC

2.4

Maximum Power Dissipation

Ta = 75

oC

PD

1.7

W

Operating Junction Temperature

TJ

+150

oC

Operating Junction and Storage Temperature Range

TJ, TSTG

- 55 to +150

oC

Thermal Performance

Parameter

Symbol

Limit

Unit

Junction to Case Thermal Resistance

RӨJF

32

oC/W

Junction to Ambient Thermal Resistance (PCB mounted)

RӨJA

62.5

oC/W

Notes:

a. Pulse width limited by the Maximum junction temperature

b. Surface Mounted on FR4 Board, t ≤ 10 sec.

PRODUCT SUMMARY

VDS (V)

RDS(on)(mΩ)

ID (A)

55 @ VGS = 10V

4.5

60

75 @ VGS = 4.5V

3.9

Block Diagram

Dual N-Channel MOSFET

Pin Definition:

1. Source 1

8. Drain 1

2. Gate 1

7. Drain 1

3. Source 2

6. Drain 2

4. Gate 2

5. Drain 2

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