18N50L-TQ2-R datasheet(3/6 Pages) UTC

3 / 6 page

18N50

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 6

www.unisonic.com.tw

QW-R502-477.G

ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=250µA

500

Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTJ ID=250μA,Referenced to 25°C

0.5

V/°C

Drain-Source Leakage Current

IDSS

VDS=500V, VGS=0V

µA

VDS=400V, TC=125°C

µA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30 V, VDS = 0 V

100

Reverse

VGS = -30 V, VDS = 0 V

-100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=250µA

2.0

4.0

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=9A

0.24 0.32

Ω

Forward Transconductance

gFS

VDS=40V, ID=9A (Note 1)

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=25V,VGS=0V,f=1.0MHz

2200 2860

Output Capacitance

COSS

330

430

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge

VDS=400V, VGS=10V, ID=18A

(Note 1,2)

Gate-Source Charge

QGS

12.5

Gate-Drain Charge

QGD

Turn-ON Delay Time

tD(ON)

VDD=250V, ID=18A,

RG=25Ω (Note 1,2)

120

Turn-ON Rise Time

165

340

Turn-OFF Delay Time

tD(OFF)

200

Turn-OFF Fall Time

190

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

ISM

Drain-Source Diode Forward Voltage

VSD

IS =18A, VGS=0V

1.4

Body Diode Reverse Recovery Time

trr

VGS=0V, IS=18A,

dIF/dt=100A/μs (Note 1)

500

Body Diode Reverse Recovery Charge

QRR

5.4

μC

Note: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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