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18N50L-TQ2-R データシート(PDF) 1 Page - Unisonic Technologies |
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18N50L-TQ2-R データシート(HTML) 1 Page - Unisonic Technologies |
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1 / 6 page ![]() UNISONIC TECHNOLOGIES CO., LTD 18N50 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2012 Unisonic Technologies Co., Ltd QW-R502-477.G 18A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies. FEATURES * RDS(ON)=0.32Ω @ VGS=10V * High switching speed * Typically 45nC low gate charge * 100% avalanche tested * Typically 25pF low CRSS * Improved dv/dt capability SYMBOL 1.Gate 3.Source 2.Drain TO-220F1 1 TO-220F2 1 TO-263 1 ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 18N50L-TF1-T 18N50G-TF1-T TO-220F1 G D S Tube 18N50L-TF2-T 18N50G-TF2-T TO-220F2 G D S Tube 18N50L-TQ2-T 18N50G-TQ2-T TO-263 G D S Tube 18N50L-TQ2-R 18N50G-TQ2-R TO-263 G D S Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source |
同様の部品番号 - 18N50L-TQ2-R |
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同様の説明 - 18N50L-TQ2-R |
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