STGIPN3H60 datasheet(11/21 Pages) STMICROELECTRONICS

11 / 21 page

STGIPN3H60

Electrical characteristics

Doc ID 018957 Rev 3

11/21

Table 11.

OPAMP characteristics (VCC = 15 V unless otherwise specified)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

Vio

Input offset voltage

Vic = 0 V, Vo = 7.5 V

Iio

Input offset current

Vic = 0 V, Vo = 7.5 V

440

Iib

Input bias current (1)

100

200

Vicm

Input common mode voltage

range

VOL

Low level output voltage

RL = 10 kΩ to VCC

150

VOH

High level output voltage

RL = 10 kΩ to GND

14.7

Output short circuit current

Source,

Vid = +1; Vo = 0 V

Sink,

Vid = -1; Vo = VCC

Slew rate

Vi = 1 - 4 V; CL = 100 pF;

unity gain

2.5

3.8

μs

GBWP

Gain bandwidth product

Vo = 7.5 V

MHz

Avd

Large signal voltage gain

RL = 2 kΩ

SVR

Supply voltage rejection ratio

vs. VCC

CMRR

Common mode rejection ratio

The direction of input current is out of the IC.

Table 12.

Sense comparator characteristics (VCC = 15 V unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Iib

Input bias current

VCP+ = 1 V

µA

Vol

Open drain low level output

voltage

Iod = 3 mA

0.5

td_comp

Comparator delay

SD/OD pulled to 5 V through

100 k

Ω resistor

130

Slew rate

CL = 180 pF; Rpu = 5 kΩ

V/µsec

tsd

Shutdown to high / low side

driver propagation delay

OUT = 0, Vboot = VCC,

IN = 0 to 3.3 V

125

200

tisd

Comparator triggering to high /

low side driver turn-off

propagation delay

Measured applying a voltage

step from 0 V to 3.3 V to pin

CINi

200

250

STGIPN3H60 データシート(PDF) 11 Page - STMicroelectronics

STGIPN3H60 データシート(HTML) 11 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21

データシートダウンロード