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AST20S データシート(PDF) 32 Page - Advanced Semiconductor Business Inc. |
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AST20S データシート(HTML) 32 Page - Advanced Semiconductor Business Inc. |
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32 / 33 page ![]() 32/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 August 2012 AST20S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of -5 dBm/tone separated by 1MHz. Parameter Symbol Unit Frequency (MHz) 900 1500 2100 Power Gain Gp dB 14 13.5 13.5 Noise Figure NF dB 1.5 1.5 1.4 Input Return Loss RLin dB -6 -6 -11 Output Return Loss RLout dB -18 -14 -10 1 dB Gain Compression Output Power Po(1dB) dBm 5 5 5.5 3 rd Intercept Point Output Power 1) OIP3 dBm 19 19.5 20 Circuit Current Icc mA 12 12 12 Schematic S-parameters & K-factor APPLICATION CIRCUIT SMATV, 50 ohm 900 ~ 2100 MHz +3 V Board Layout (FR4, 24x16 mm 2, 0.8T) 0 500 1000 1500 2000 2500 3000 3500 -30 -20 -10 0 10 20 30 S12 S22 S11 S21 Frequency [MHz] 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 Frequency (MHz) S11 S22 freq (900.0MHz to 2.100GHz) Bottom C2=100 pF C3=100 pF RF OUT AST20S C5=10 nF RF IN R1=750 W C6=1 uF VDD R2=5.1 k W L2=82 nH R4=51 W C1=1.2 pF C4=100 pF R3=390 W L1=1.5 nH L3=82 nH Top |
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