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AST20S データシート(PDF) 14 Page - Advanced Semiconductor Business Inc. |
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AST20S データシート(HTML) 14 Page - Advanced Semiconductor Business Inc. |
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14 / 33 page ![]() 14/33 ASB Inc. · sales@asb.co.kr · Tel: +82-42-528-7223 August 2012 AST20S High Gain, Low Noise Amplifier 1) OIP3 is measured with two tones at an output power of +0dBm/tone separated by 1MHz. Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Power Gain Gp F = 2.5 GHz 11 dB Noise Figure NF F = 2.5 GHz 0.9 dB Input Return Loss RLin F = 2.5 GHz -10 dB Output Return Loss RLout F = 2.5 GHz -14 dB 1 dB Gain Compression Output Power Po(1dB) F = 2.5 GHz 15 dBm 3 rd Intercept Point Output Power 1) OIP3 F = 2.5 GHz 29.5 dBm Circuit Current Icc F = 2.5 GHz Non-RF 20 mA Schematic S-parameters & K-factor APPLICATION CIRCUIT 2500 MHz +3.3 V Board Layout (FR4, 23x13 mm 2, 0.8T) Note: 1) the length of the strip line P1 is given as below at the PCB with Er = 4.5 and T = 0.8 mm. *P1 Length: 2.5 mm, Width: 0.3 mm 2) Gain and S11 are in trade-off and varied with the length of P1 Bottom Top C1=5 pF C2=10 pF RF OUT AST20S C3=10 nF RF IN L2=10 nH *P1 R1=750 W C4=1 uF *P1 VDD R2=5.1 k W L1=8.2 nH R3=33 W 2000 2200 2400 2600 2800 3000 -30 -20 -10 0 10 20 30 S12 S22 S11 S21 Frequency [MHz] 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 Frequency (MHz) S11 S22 freq (2.000GHz to 3.000GHz) |
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