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ISO8200B データシート(PDF) 15 Page - STMicroelectronics

部品番号 ISO8200B
部品情報  Galvanic isolated octal high-side smart power solid state relay
PDF  33 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ISO8200B データシート(HTML) 15 Page - STMicroelectronics

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ISO8200B
Electrical characteristics
Doc ID 023802 Rev 1
15/33
Table 11.
IEC 60747-5-2 insulation characteristics
Symbol
Parameter
Test condition
Characteristic
Unit
Installation classification (EN
60664-1, Table 1) (1)(2)
1.
These ratings refer to reinforced insulation. If only basic insulation is needed, the installation categories of
each mains voltage level can be scaled up one level.
2.
For three-phase systems the values in the table refer to the line-to-neutral voltage.
For rated mains voltage = 50 V
RMS
I–IV
For rated mains voltage = 100 V
RMS
I–III
Pollution degree (EN 60664-1)
2
VIORM
Maximum working insulation
voltage
60
VPEAK
Vini
Input to output test voltage (3)
3.
Type and sample tests. A 3563 V DC test with TBD s duration is performed at production level.
tini < 5 s
1644
VPEAK
Partial discharge < 5 pC
Vp
tm = 1 s
1315
VPEAK
Partial discharge < 5 pC
VIOTM
Transient overvoltage (3)
(highest allowable overvoltage)
tini = 60 s
3500
VPEAK
RIO
Insulation resistance
VIO = 500 V at TS
>109
Ω
Table 12.
Device immunity specifications
Symbol
Parameter
Test condition
Min.
Typ.
Max.
Unit
DVISO/dt
Common mode transient
immunity
DVISO = 600V
-25
25
V/ns
BIM
Magnetic field immunity
IEC61000-4-8
TBD
mT
HFI
Radiated immunity
According to IEC61000-4-3
10
V/m



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