AD780

REV. B

–3–

ORDERING GUIDE

Initial

Temperature

Temperature

Package

Model

Error

Range

Coefficient

Options

AD780AN

5.0 mV

–40

°C to +85°C

7 ppm/

°C

Plastic Dip

AD780AR

5.0 mV

–40

°C to +85°C

7 ppm/

°C

SOIC

AD780AR-REEL7

5.0 mV

–40

°C to +85°C

7 ppm/

°C

SOIC

AD780BN

1.0 mV

–40

°C to +85°C

3 ppm/

°C

Plastic Dip

AD780BR

1.0 mV

–40

°C to +85°C

3 ppm/

°C

SOIC

AD780BR-REEL

1.0 mV

–40

°C to +85°C

3 ppm/

°C

SOIC

AD780BR-REEL7

1.0 mV

–40

°C to +85°C

3 ppm/

°C

SOIC

AD780CR

1.5 mV

–40

°C to +85°C

7 ppm/

°C

SOIC

AD780CR-REEL7

1.5 mV

–40

°C to +85°C

7 ppm/

°C

SOIC

ABSOLUTE MAXIMUM RATINGS*

Trim Pin to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V

Temp Pin to Ground . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V

Power Dissipation (25

°C) . . . . . . . . . . . . . . . . . . . . . . 500 mW

Storage Temperature . . . . . . . . . . . . . . . . . . . –65

°C to +150°C

Lead Temperature (Soldering, 10 sec) . . . . . . . . . . . . . 300

°C

Output Protection: Output safe for indefinite short to ground

ESD Classification . . . . . . . . . . . . . . . . . . . . . Class 1 (1000 V)

*Stresses above those listed under Absolute Maximum Ratings may cause perma-

nent damage to the device. This is a stress rating only; functional operation of the

device at these or any conditions above those indicated in the operational specifi-

cation is not implied. Exposure to absolute maximum specifications for extended

periods may affect device reliability.

PIN CONFIGURATION

8-Lead Plastic DIP, SOIC and Cerdip Packages

1

2

3

4

8

7

6

5

TOP VIEW

(Not to Scale)

AD780

2.5/3.0V SELECT

(NC OR GND)

NC

TRIM

NC

TEMP

GND

NC = NO CONNECT

DIE LAYOUT

NOTES

Die Thickness: The standard thickness of Analog Devices Bipolar dice is

24 mils

±2 mils.

Die Dimensions: The dimensions given have a tolerance of

± 2 mils.

Backing: The standard backside surface is silicon (not plated). Analog Devices

does not recommend gold-backed dice for most applications.

Edges: A diamond saw is used to separate wafers into dice thus providing per-

pendicular edges half-way through the die.

In contrast to scribed dice, this technique provides a more uniform die shape

and size. The perpendicular edges facilitate handling (such as tweezer pick-up)

while the uniform shape and size simplifies substrate design and die attach.

Top Surface: The standard top surface of the die is covered by a layer of

glassivation. All areas are covered except bonding pads and scribe lines.

Surface Metalization: The metalization to Analog Devices bipolar dice is alu-

minum. Minimum thickness is 10,000Å.

Bonding Pads: All bonding pads have a minimum size of 4.0 mils by 6.0 mils.

The passivation windows have a 3.6 mils by 5.6 mils minimum size.

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the AD780 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE