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L6482 データシート(PDF) 19 Page - STMicroelectronics |
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L6482 データシート(HTML) 19 Page - STMicroelectronics |
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19 / 73 page ![]() L6482 Functional description Doc ID 023768 Rev 2 19/73 6 Functional description 6.1 Device power-up During power-up, the device is under reset (all logic IOs disabled and power bridges in high impedance state) until the following conditions are satisfied: ● VCC is greater than VCCthOn ● VBOOT - VS is greater than ΔVBOOTthOn ● VREG is greater than VREGthOn ● Internal oscillator is operative ● STBY/RESET input is forced high. After power-up, the device state is the following: ● Parameters are set to default ● Internal logic is driven by internal oscillator and a 2-MHz clock is provided by the OSCOUT pin ● Bridges are disabled (high impedance). After power-up, a period of tlogicwu must pass before applying a command to allow proper oscillator and logic startup. Any movement command makes the device exit from High Z state (HardStop and SoftStop included). 6.2 Logic I/O Pins CS, CK, SDI, STCK, SW and STBY/RESET are TTL/CMOS 3.3 V-5 V compatible logic inputs. Pin SDO is a TTL/CMOS compatible logic output. VDD pin voltage imposes a logical output voltage range. Pins FLAG and BUSY/SYNC are open drain outputs. SW and CS inputs are internally pulled up to VDD and STBY/RESET input is internally pulled down to ground. 6.3 Charge pump To ensure the correct driving of the high-side integrated MOSFETs, a voltage higher than the motor power supply voltage needs to be applied to the VBOOT pin. The high-side gate driver supply voltage VBOOT is obtained through an oscillator and a few external components realizing a charge pump (see Figure 4). |
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