TS52002 datasheet(5/14 Pages) ETC2

部品番号	TS52002

部品情報	High Efficiency NiMH Battery Charger for Photovoltaic Sources

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TS52002

Version 1.2

Specifications subject to change

WWW.TRIUNESYSTEMS.COM

CHARACTERISTICS

Electrical Characteristics, TJ = -40C to 125C, VIN = 5.3V (unless otherwise noted)

Symbol

Parameter

Condition

Min

Typ

Max

Unit

VIN Supply Voltage

V IN

Photovoltaic Voltage Input

3.2

5.3

7.2

V

ICC-NORM

Quiescent current

Normal Mode

ILOAD = 0A

3

mA

ICC-STBY

Quiescent current

Disable Mode

EN = 0V

15

50

uA

VBAT Leakage

IBAT-LEAK

Leakage Current From Output

EN = 0V

10

uA

IBAT-BACK

Reverse Current

VBAT > VIN

10

uA

VIN Under-Voltage Lockout

VIN-UV

Input Supply Under-Voltage

Threshold

VIN Increasing

3.15

V

VIN-UV_HYST

Input Supply Under-Voltage

Threshold Hysteresis

100

200

mV

OSC

FOSC

Oscillator Frequency

0.9

1

1.1

MHz

nFLT Open Drain Output

IOH-nFLT

High-Level Output Leakage

VnFLT = 5.3V

0.1

uA

VOL-nFLT

Low-Level Output Voltage

InFLT = -1mA

0.4

V

EN/SCL/SDA Input Voltage Thresholds

VIH

High Level Input Voltage

2.2

V

VIL

Low Level Input Voltage

0.8

V

VHYST

Input Hysteresis

200

mV

IIN-EN

Input Leakage

VEN=VIN

0.1

uA

VEN=0V

-2.0

uA

IIN-SCL

Input Leakage

VSCL=VIN

55

uA

VSCL=0V

-0.1

uA

IIN-SDA

Input Leakage

VSDA=VIN

0.1

uA

VSDA=0V

-0.1

uA

VOL-SDA

Low-Level Output Voltage

ISDA = -1mA

0.4

V

Thermal Shutdown

TSD

Thermal Shutdown Junction

Temperature

150

170

C

TSDHYST

TSD Hysteresis

10

C

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