TCS3404CS datasheet(6/41 Pages) AMSCO

6 / 41 page

TCS3404, TCS3414

DIGITAL COLOR SENSORS

TAOS137A − APRIL 2011

The LUMENOLOGY

r Company

E 2011, TAOS Inc.

www.taosinc.com

Optical Characteristics, VDD = 3 V, TA = 255C, GAIN = 64y, Tint = 12ms (unless otherwise noted) (see

Notes 1 and 2)

PARAMETER

TEST

Red Channel

Green Channel

Blue Channel

Clear Channel

UNIT

PARAMETER

TEST

CONDITIONS

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

Irradiance

λp = 470 nm,

See Note 3

15%

50%

65%

90%

59.0

65.6

72.5

responsivity

(CS

package)

λp = 524 nm,

See Note 4

15%

60%

90%

35%

71.2

76.9

82.7

(counts/

μW/

cm2)

package)

λp = 640 nm,

See Note 5

80%

110%

15%

80.6

90.1

99.5

cm2)

Irradiance

λp = 470 nm,

See Note 3

15%

10%

50%

65%

90%

56.3

62.5

69.1

responsivity

(FN

package)

λp = 524 nm,

See Note 4

15%

60%

90%

35%

72.5

78.4

84.3

(counts/

μW/

cm2)

package)

λp = 640 nm,

See Note 5

80%

110%

15%

94.2

105.3

116.3

cm2)

NOTES: 1. The percentage shown represents the ratio of the respective red, green, or blue channel value to the clear channel value.

2. Optical measurements are made using small-angle incident radiation from a light-emitting diode (LED) optical source.

3. The 470 nm input irradiance is supplied by an

InGaN light-emitting diode with the following characteristics:

peak wavelength

λp = 470 nm, spectral halfwidth Δλ½ = 35 nm, and luminous efficacy = 75 lm/W.

4. The 524 nm input irradiance is supplied by an

InGaN light-emitting diode with the following characteristics:

peak wavelength

λp = 524 nm, spectral halfwidth Δλ½ = 47 nm, and luminous efficacy = 520 lm/W.

5. The 640 nm input irradiance is supplied by a Al

InGaP light-emitting diode with the following characteristics:

peak wavelength

λp = 640 nm, spectral halfwidth Δλ½ = 17 nm, and luminous efficacy = 155 lm/W.

6. Illuminance responsivity Rv is calculated from the irradiance responsivity Re by using the LED luminous efficacy values stated in

notes 3, 4, and 5 and using 1 lx = 1 lm/m2.

Operating Characteristics, VDD = 3 V, TA = 255C, (unless otherwise noted) (see Notes 2, 3, and 4)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

3.8

4.2

Gain scaling, relative to 1

× gain setting

15.2

16.8

Gain scaling, relative to 1

× gain setting

60.8

67.2

Dark ADC count value

Ee = 0, 64

× gain setting, T

int = 400 ms

counts

Maximum digital count value

Prescale = 1, Tint = 400 ms (Note 1)

65535

counts

fosc

Oscillator frequency

4.2

4.4

4.6

MHz

Internal integration time tolerance

−5

Temperature coefficient of responsivity (SYNC mode)

λ 700 nm, −40°C TA 85°C

± 200

ppm/

°C

NOTES: 1. At shorter integration times and/or higher Prescale settings, the device will reach saturation of the analog section before the digital

count reaches the maximum 16-bit value. The worst-case (lowest) analog saturation value can be obtained using the formula: Analog

saturation = (fosc(min)

×Tint) ÷Prescale, where Fosc(min) is the minimum oscillator frequency in Hz, and tint is the actual integration

time (internal, manually-timed, or sync-generated) in seconds.

2. Gain is controlled by the gain register (07h) described in the Register section.

3. Measurements taken when the Photodiode field value in the Photodiode Register (06h) is 00b and when the Prescaler field value

in the Gain Register (07h) is 000b.

4. The full scale ADC count value is slew-rate limited for short integration times and is limited by the 16-bit counter for long integration

times. The nominal transition between the two regions is tint = 65535/5000 = 13.1 ms.

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