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UTT6NP10G-S08-R データシート(PDF) 3 Page - Unisonic Technologies

部品番号 UTT6NP10G-S08-R
部品情報  DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL)
PDF  7 Pages
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メーカー  UTC [Unisonic Technologies]
ホームページ  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT6NP10G-S08-R データシート(HTML) 3 Page - Unisonic Technologies

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UTT6NP10
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 7
www.unisonic.com.tw
QW-R502-772.D
ABSOLUTE MAXIMUM RATINGS(TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
N-CHANNEL P-CHANNEL
Drain-Source Voltage
VDSS
100
-100
V
Gate-Source Voltage
VGSS
±
20
±
20
V
Drain Current
Continuous
(Note 3)
TA=25°C
ID
3.1
-3.2
A
TA=70°C
2.5
-2.5
A
Pulsed (Note 1)
IDM
12.4
-12.8
A
Power Dissipation (TA=25°C)
SOP-8
PD
2
W
TO-252-4
3.1
W
Junction Temperature
TJ
-55~+150
°C
Storage Temperature Range
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
SOP-8
θJA
62.5
C/W
TO-252-4
40
C/W
ELECTRICAL CHARACTERISTICS (TA=25°С, unless otherwise specified)
N-channel
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
100
V
Drain-Source Leakage Current
IDSS
VDS=80V, VGS=0V
10
µA
Gate-Source Leakage Current
Forward
IGSS
VGS=+20V
+100 nA
Reverse
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=10V, ID=2A
150
mΩ
VGS=5V, ID=1A
250
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
530
pF
Output Capacitance
COSS
45
pF
Reverse Transfer Capacitance
CRSS
35
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VGS=10V, VDS=80V, ID=3.1A
10
16
nC
Gate to Source Charge
QGS
2
nC
Gate to Drain Charge
QGD
4
nC
Turn-ON Delay Time (Note 2)
tD(ON)
VDS=50V, ID=3.1A
VGS=10V, RG=3.3Ω
6.5
ns
Rise Time
tR
7
ns
Turn-OFF Delay Time
tD(OFF)
14
ns
Fall-Time
tF
3.5
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage(Note 2)
VSD
IS=3.1A, VGS=0V
1.3
V



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