UTT6NP10G-S08-R datasheet(4/7 Pages) UTC

4 / 7 page

UTT6NP10

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R502-772.D



ELECTRICAL CHARACTERISTICS(Cont.)

P-Channel

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

ID=-250µA, VGS=0V

-100

Drain-Source Leakage Current

IDSS

VDS=-80V, VGS=0V

-10

µA

Gate-Source Leakage Current

Forward

IGSS

VGS=+20V, VGS=0V

+100 nA

Reverse

VGS=-20V, VGS=0V

-100 nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1

-3

Static Drain-Source On-State Resistance

(Note 2)

RDS(ON)

VGS=-10V, ID=-2A

155 mΩ

VGS=-5V, ID=-1A

250 mΩ

DYNAMIC PARAMETERS

Input Capacitance

CISS

VGS=0V, VDS=-25V, f=1.0MHz

1400 2240 pF

Output Capacitance

COSS

110

Reverse Transfer Capacitance

CRSS

SWITCHING PARAMETERS

Total Gate Charge (Note 2)

VGS=-10V, VDS=-80V, ID=-3.2A

Gate to Source Charge

QGS

Gate to Drain Charge

QGD

Turn-ON Delay Time (Note 2)

tD(ON)

VDS=-50V, ID=--3.2A

VGS=-10V, RG=3.3Ω

Rise Time

Turn-OFF Delay Time

tD(OFF)

Fall-Time

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage(Note 2)

VSD

IS=-3.2A, VGS=0V

-1.3

Notes: 1. Pulse Test: Pulse width limited by Max. junction temperature.

2. N-CH, P-

≦

CH are same, mounted on 2oz FR4 board t 10s.

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