HTMS1x01_8x01

All information provided in this document is subject to legal disclaimers.

© NXP Semiconductors N.V. 2014. All rights reserved.

Product data sheet

COMPANY PUBLIC

Rev. 3.3 — 17 October 2014

152933

46 of 57

NXP Semiconductors

HTMS1x01; HTMS8x01

HITAG µ transponder IC

17. Limiting values

[1]

Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only

and functional operation of the device at these or any conditions other than those described in the Operating Conditions and Electrical

Characteristics section of this specification is not implied.

[2]

This product includes circuitry specifically designed for the protection of its internal devices from the damaging effects of excessive static

charge. Nonetheless, it is suggested that conventional precautions should be taken to avoid applying values greater than the rated

maxima

18. Characteristics

[1]

Typical ratings are not guaranteed. Values are at 25

[2]

Measured with an HP4285A LCR meter at 125 kHz/room temperature (25

C); V

[3]

Integrated Resonance Capacitor: 210pF

3%

[4]

Integrated Resonance Capacitor: 280pF

5%

Table 47.

Limiting values[1][2]

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

storage temperature

55

+125

C

electrostatic discharge voltage

JEDEC JESD 22-A114-AB

Human Body Model

2-

kV

maximum input current

IN1-IN2

20

mA

Tj

junction temperature

40

+85

C

Table 48.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

operating frequency

100

125

150

kHz

input voltage

IN1-IN2

456V

input current

IN1-IN2

-

-

10

mA

input capacitance

between IN1-IN2

HTMS1x01

[2][3]

203.7

210

216.3

pF

HTMS8x01

[2][4]

266

280

294

pF