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IDT71342LA55PF データシート(PDF) 5 Page - Integrated Device Technology |
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IDT71342LA55PF データシート(HTML) 5 Page - Integrated Device Technology |
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5 / 13 page  6.05 5 IDT71342SA/LA HIGH-SPEED 4K x 8 DUAL-PORT STATIC RAM WITH SEMAPHORE COMMERCIAL TEMPERATURE RANGE AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE(4) (CONT'D) 71342X45 71342X55 71342X70 Symbol Parameter Min. Max. Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 45 — 55 — 70 — ns tAA Address Access Time — 45 — 55 — 70 ns tACE Chip Enable Access Time (3) —45 — 55 — 70 ns tAOE Output Enable Access Time — 25 — 30 — 40 ns tOH Output Hold from Address Change 0 — 0 — 0 — ns tLZ Output Low-Z Time (1, 2) 5— 5 — 5 — ns tHZ Output High-Z Time (1, 2) —20 — 25 — 30 ns tPU Chip Enable to Power Up Time (2) 0— 0 — 0 — ns tPD Chip Disable to Power Down Time (2) —50 — 50 — 50 ns tSOP SEM Flag Update Pulse ( OE or SEM)15 — 20 — 20 — ns tWDD Write Pulse to Data Delay (4) —70 — 80 — 90 ns tDDD Write Data Valid to Read Data Delay (4) —45 — 55 — 70 ns tSAA Semaphore Address Access Time — 45 — 55 — 70 ns NOTES: 1. Transition is measured ±500mV from Low or High-impedance voltage with the Ouput Test Load (Figure 2). 2. This parameter is guaranteed by device characterization, but is not production tested. 3. To access RAM, CE = VIL, SEM = VIH. To access semaphore, CE = VIH, and SEM = VIL. 4. “X” in part number indicates power rating (SA or LA). AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE(4) 71342X20 71342X25 71342X35 Symbol Parameter Min. Max. Min. Max. Min. Max. Unit READ CYCLE tRC Read Cycle Time 20 — 25 — 35 — ns tAA Address Access Time — 20 — 25 — 35 ns tACE Chip Enable Access Time (3) —20 — 25 — 35 ns tAOE Output Enable Access Time — 15 — 15 — 20 ns tOH Output Hold from Address Change 0 — 0 — 0 — ns tLZ Output Low-Z Time (1, 2) 0— 0 — 0 — ns tHZ Output High-Z Time (1, 2) —15 — 15 — 20 ns tPU Chip Enable to Power Up Time (2) 0— 0 — 0 — ns tPD Chip Disable to Power Down Time (2) —50 — 50 — 50 ns tSOP SEM Flag Update Pulse ( OE or SEM)— — 10 — 15 — ns tWDD Write Pulse to Data Delay (4) —40 — 50 — 60 ns tDDD Write Data Valid to Read Data Delay (4) —30 — 30 — 35 ns tSAA Semaphore Address Access Time — — — 25 — 35 ns 2721 tbl 09 2721 tbl 10 |
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