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UM1556 データシート(PDF) 9 Page - STMicroelectronics

部品番号 UM1556
部品情報  VIPower M0-5 and M0-5Enhanced
PDF  87 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

UM1556 データシート(HTML) 9 Page - STMicroelectronics

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UM1556
General items
Doc ID 023520 Rev 2
9/87
1.2
Reverse battery protection
1.2.1
Reverse battery protection of monolithic HSDs
The reverse battery protection is inserted to the GND terminal of the driver. There are three
possible solutions: resistor only, resistor plus diode and MOSFET. There is a relatively low
current in the GND path and therefore no high power components are needed. However,
this protection circuit still must be able to handle the clamped ISO pulse current, as well as
the ISO pulse voltage. We also have to consider the fact that this simple "ground" circuitry
doesn't provide any protection to the connected load. If a reverse battery condition occurs,
the load is supplied in reverse polarity through internal body diode of the HSD and the
power dissipation on the HSD can become critical (depending on connected load and
thermal connection of the HSD). With a typical voltage drop on the internal body diode of
about 0.7 V, the resulting power dissipation = 0.7 ILOAD [W].
Reverse battery protection using resistor
Figure 4.
Voltage levels during reverse battery – resistor protection
A resistor Rgnd in the GND line prevents a short circuit through the internal substrate diode
of the HSD during a reverse battery condition. The minimum resistor value is limited by the
DC reverse ground pin current of the HSD. The maximum resistor value is limited by the
drop voltage, caused by the on-state supply current (IS) of the HSD. The voltage drop
across this resistor elevates the minimum input High threshold and normally should not
exceed 1 V (depending on microcontroller I/O levels).
Equation 1
Equation 2
R
GND
V
GND
I
S(on)max
------------------------
≤
R
GND
V
BAT
I
GND(reverse)max
-------------------------------------------
≥



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