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AN4191 データシート(PDF) 13 Page - STMicroelectronics

部品番号 AN4191
部品情報  This report shows the analysis performed on Power MOSFET devices
PDF  20 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
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AN4191 データシート(HTML) 13 Page - STMicroelectronics

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AN4191
Rg impact for MOSFETs in buck/buck-boost configurations
Doc ID 023815 Rev 1
13/20
Looking at the green trace (Ch2, drain voltage) in Figure 13, the input voltage (5 V) and the
output voltage (- 5 V) are clearly evident, together with the oscillations due to the converter
DCM. On the other hand, in Figure 14 the “high Rg” device shows an incorrect behavior. In
fact, the converter works in “overcurrent protection mode” when the 5 V is pulled down to 3.5
V and the output voltage has an incorrect value. In Figure 15, more switching cycles for the
“bad” part are shown.
Figure 15.
High Rg device steady-state waveforms
Analyzing the drain voltage waveform, the slow drain falling edge indicates that the FET is
not turned off although the gate voltage is high (P-channel device). It is evident that the slow
falling-down of the FET drain voltage becomes more dangerous during steady-state
conditions, when the device turns on and off with a certain fsw. In fact, the device cannot be
turned-off effectively at each switching cycle. So, this slow MOSFET turn-off causes an
undesired switching loss increase, and therefore, a power dissipation and temperature rise,
finally producing the device failure.
Figure 13.
Standard Rg value
Figure 14.
High Rg value
AM16420V1
AM16421V1
AM16422V1



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