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AN4191 データシート(PDF) 18 Page - STMicroelectronics |
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AN4191 データシート(HTML) 18 Page - STMicroelectronics |
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18 / 20 page ![]() Conclusions AN4191 18/20 Doc ID 023815 Rev 1 4 Conclusions From the experimental results, we can summarize that a higher Rg value not only worsens the MOSFET’s working conditions, by increasing the temperature and switching losses, it also worsens application efficiency and working conditions by fully modifying the device’s switching behavior and doesn't achieve the converter values set by design. Moreover, a higher Rg heavily affects the driver/PWM controller safety working condition, forcing it to sustain a higher temperature, as well as dissipating a larger power to charge up the MOSFET input capacitance. It is also dangerous for producing the cross conduction that may cause system disruption by the static dV/dt. |
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