データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

AN2703 データシート(PDF) 3 Page - STMicroelectronics

部品番号 AN2703
部品情報  All datasheet parameters are rated as minimum or maximum values
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN2703 データシート(HTML) 3 Page - STMicroelectronics

  AN2703 Datasheet HTML 1Page - STMicroelectronics AN2703 Datasheet HTML 2Page - STMicroelectronics AN2703 Datasheet HTML 3Page - STMicroelectronics AN2703 Datasheet HTML 4Page - STMicroelectronics AN2703 Datasheet HTML 5Page - STMicroelectronics AN2703 Datasheet HTML 6Page - STMicroelectronics AN2703 Datasheet HTML 7Page - STMicroelectronics AN2703 Datasheet HTML 8Page - STMicroelectronics AN2703 Datasheet HTML 9Page - STMicroelectronics  
Zoom Inzoom in Zoom Outzoom out
 3 / 9 page
background image
AN2703
Parameters
3/9
IGM
Peak gate current
This is the maximum peak current allowed through gate and cathode, defined
for a 20 µs pulse duration.
If the absolute rating is exceeded, the component may be damaged.
PG(AV)
Average gate power dissipation
This is the maximum average power that can be dissipated by the gate junction.
If the absolute rating is exceeded, the component may be damaged.
VRGM
Peak reverse gate voltage
This parameter is only defined for SCRs. It is the maximum reverse voltage than
can be applied across gate and cathode terminals, without risk of destruction of
the gate to cathode junction.
VGM
Peak positive gate voltage (with respect to the pin "COM")
This parameter is only defined for ACSs. It is the maximum voltage than can be
applied across gate and COM terminals without risk of destruction of the gate to
COM junction.
Table 2.
Electrical characteristics parameters
Parameter
Name and description
P
Average power dissipation
This is the average power dissipated by current conduction through the device
for one full cycle operation.
IGT
Triggering gate current
This is the current to apply between gate and cathode (or gate and electrode A1
for TRIAC) to turn-on the device. This parameter defines the sensitivity of the
component.
For a SCR, the gate current has always to be sunk by the gate.
For a TRIAC, IGT is define for 3 or 4 quadrants corresponding to the different
polarities of A2, A1 and gate:
- Q1: Ig sunk by the gate, VA2-A1 > 0
- Q2: Ig sourced by the gate, VA2-A1 > 0
- Q3: Ig sourced by the gate, VA2-A1 < 0
- Q4: Ig sunk by the gate, VA2-A1 < 0
The IGT value is higher in Q4 quadrant.
For ACS types, IGT is defined in two quadrants (Q2 and Q3).
VGT
Triggering gate voltage
This is the voltage to apply across gate and cathode (or gate and electrode A1
for TRIAC) to reach the IGT current and then to trigger the device.
VGD
Non-triggering gate voltage
VGD is the maximum voltage which can be applied across gate and cathode (or
gate and electrode A1 for TRIAC) without causing undesired turn-on. This
parameter is specified, for the worst case scenario, at the maximum junction
temperature.
Table 1.
Absolute ratings parameters (continued)
Parameter
Name and description



Html Pages

1 2 3 4 5 6 7 8 9


データシート ダウンロード

Go To PDF Page


リンク URL



ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   データシートへのリンク    |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com