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STM8362 データシート(PDF) 5 Page - SamHop Microelectronics Corp.

部品番号 STM8362
部品情報  Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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メーカー  SAMHOP [SamHop Microelectronics Corp.]
ホームページ  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STM8362 データシート(HTML) 5 Page - SamHop Microelectronics Corp.

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STM8362
www.samhop.com.tw
Nov,12,2009
5
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
Rg, Gate Resistance(
Ω)
Figure 11. switching characteristics
VDS, Drain-Source Voltage(V)
Figure 12. Maximum Safe Operating Area
56
42
0
24
6
8
10
0
ID=6.6A
28
14
84
70
125 C
25 C
75 C
20.0
10.0
1.0
00.3
0.6
0.9
1.2
1.5
5.0
1200
1000
800
600
400
200
0
Cis s
Cos s
Crs s
10
8
6
4
2
0
02
4
6
810
12
14 16
V DS =20V
ID=6.6A
Ver 1.1
0
5
10
15
20
25
30
125 C
25 C
75 C
1
10
100
60
100
10
1
300
6
V DS =20V , ID=1A
V G S =10V
Tr
TD(off)
Tf
TD(on)
0.1
1
10
40
10
1
0.1
VGS=10V
Single Pulse
TA=25 C
R
DS
(O
N)
Lim
it
1m
s
100u
s
10m
s
10u
s
DC
10m
s



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