STM8362 datasheet(1/11 Pages) SAMHOP

部品番号	STM8362

部品情報	Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PDF	11 Pages

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メーカー	SAMHOP [SamHop Microelectronics Corp.]

ホームページ	http://www.samhop.com.tw

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1 / 11 page

S mHop Microelectronics C orp.

a

STM8362

Symbol

VDS

VGS

IDM

EAS

W

A

PD

°C

2

-55 to 150

ID

Units

Parameter

40

6.6

24

V

±20

TC=25°C

Gate-Source Voltage

Drain-Source Voltage

THERMAL CHARACTERISTICS

mJ

PRODUCT SUMMARY (N-Channel)

VDSS

ID

RDS(ON) (m

Ω) Max

40V

6.6A

45 @ VGS=4.5V

29 @ VGS=10V

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)

N-Channel

Drain Current-Continuous

a

-Pulsed

b

A

Sigle Pulse Avalanche Energy

d

Maximum Power Dissipation

a

Operating Junction and Storage

Temperature Range

TJ, TSTG

www.samhop.com.tw

Nov,12,2009

1

Details are subject to change without notice.

62.5

Thermal Resistance, Junction-to-Ambient

R JA

a

TC=25°C

PRODUCT SUMMARY (P-Channel)

VDSS

ID

RDS(ON) (m

Ω) Max

-40V

-5.8A

60 @ VGS=-4.5V

38 @ VGS=-10V

-40

-5.8

-21

±20

P-Channel

TC=70°C

A

5.3

-4.6

1.28

W

TC=70°C

°C/W

30

36

Ver 1.1

SO-8

1

4

3

2

1

D2

D1

G 2

S 2

G 1

S 1

5

6

7

8

Green

Product

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