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SGA3363Z データシート(PDF) 2 Page - RF Micro Devices

部品番号 SGA3363Z
部品情報  DC to 5500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
PDF  6 Pages
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メーカー  RFMD [RF Micro Devices]
ホームページ  http://www.rfmd.com
Logo RFMD - RF Micro Devices

SGA3363Z データシート(HTML) 2 Page - RF Micro Devices

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DS111011
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGA3363Z
Typical Performance at Key Operating Frequencies
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)70
mA
Max Device Voltage (VD)4
V
Max RF Input Power
+18
dBm
Max Junction Temp (TJ)+150
°C
Operating Temp Range (TL)
-40 to +85
°C
Max Storage Temp
+150
°C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Parameter
Unit
100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain
dB
17.7
17.6
17.5
15.9
15.3
14.0
Output Third Order Intercept Point
dBm
26.0
25.4
23.1
21.3
Output Power at 1dB Compression
dBm
11.5
11.6
10.5
9.4
Input Return Loss
dB
21.3
19.7
18.8
20.4
18.8
15.1
Output Return Loss
dB
20.2
21.3
23.9
25.5
22.5
20.1
Reverse Isolation
dB
20.7
20.7
20.8
21.0
20.8
20.1
Noise Figure
dB
3.1
2.9
3.5
3.8
Test Conditions: VS=5V, ID=35mA Typ., OIP3 Tone Spacing=1MHz, POUT per tone=-5dBm, RBIAS=68, TL=25°C, ZS=ZL=50
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
15
20
25
30
35
00.511.5
2
2.5
3
Frequency (GHz)
5
7
9
11
13
15
00.5
11.5
22.5
3
Frequency (GHz)
T
L=+25ºC
T
L=+25ºC
OIP
3 vs. Frequency
V
D= 2.6 V, ID= 35 mA (Typ.)
P
1dB vs. Frequency
V
D= 2.6 V, ID= 35 mA (Typ.)
0
1
2
3
4
5
00.5
11.5
2
2.5
3
Frequency (GHz)
T
L=+25ºC
Noise Figure vs. Frequency
V
D= 2.6 V, ID= 35 mA (Typ.)



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