Features

1 of 6

Optimum Technology

Matching® Applied

GaAs HBT

InGaP HBT

GaAs MESFET

SiGe BiCMOS

Si BiCMOS

SiGe HBT

GaAs pHEMT

Si CMOS

Si BJT

GaN HEMT

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Product Description

7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical

support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.

RF MEMS

SGA3363Z

DC to 5500MHz, CASCADABLE SiGe HBT

MMIC AMPLIFIER

The SGA3363Z is a high performance SiGe HBT MMIC Amplifier. A Darling-

excellent thermal performance. The heterojunction increases breakdown

voltage and minimizes leakage current between junctions. Cancellation of

emitter junction non-linearities results in higher suppression of intermodu-

lation products. Only two DC-blocking capacitors, a bias resistor, and an

optional RF choke are required for operation.

0

5

10

15

20

01

23

45

6

Frequency (GHz)

-40

-30

-20

-10

0

GAIN

IRL

ORL

Gain & Return Loss vs. Frequency

V

T



High Gain: 15.9dB at

1950MHz



Cascadable 50





Operates from Single Supply



Low Thermal Resistance

Package

Applications



PA Driver Amplifier



Cellular, PCS, GSM, UMTS



IF Amplifier



Wireless Data, Satellite

DS111011



Package: SOT-363

SGA3363Z

Parameter

Specification

Unit

Condition

Min.

Typ.

Max.

Small Signal Gain

15.5

17.5

19.5

dB

850MHz

15.9

dB

1950MHz

15.3

dB

2400MHz

Output Power at 1dB Compression

11.6

dBm

850MHz

10.5

dBm

1950MHz

Output Third Intercept Point

25.4

dBm

850MHz

23.1

dBm

1950MHz

Bandwidth Determined by Return

Loss

5500

MHz

>10dB

Input Return Loss

20.4

dB

1950MHz

Output Return Loss

25.5

dB

1950MHz

Noise Figure

3.5

dB

1950MHz

Device Operating Voltage

2.3

2.6

2.9

V

Device Operating Current

31

35

39

mA

Thermal Resistance

(Junction - Lead)

255

°C/W