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2N70KL-TND-R データシート(PDF) 3 Page - Unisonic Technologies |
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2N70KL-TND-R データシート(HTML) 3 Page - Unisonic Technologies |
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3 / 7 page ![]() 2N70K-MT Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 7 www.unisonic.com.tw QW-R205-008.B ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 700 V Gate-Source Voltage VGSS ±30 V Drain Current Continuous ID 2.0 A Pulsed (Note 2) IDM 8.0 A Avalanche Energy Single Pulsed (Note 3) EAS 100 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns Power Dissipation TO-220F/TO-220F1 TO-220F3 PD 28 W TO-220F2 29 W TO-251/TO-251S TO-252/TO-252D 30 W Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=50mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤2.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Ambient TO-220F/TO-220F1/ TO-220F2/TO-220F3 θJA 62.5 °C/W TO-251/TO-251S TO-252/TO-252D 110 °C/W Junction to Case TO-220F/TO-220F1 TO-220F3 θJC 4.46 °C/W TO-220F2 4.35 °C/W TO-251/TO-251S TO-252/TO-252D 4.24 °C/W |
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