2N70KL-TND-R datasheet(4/7 Pages) UTC

4 / 7 page

2N70K-MT

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

4 of 7

www.unisonic.com.tw

QW-R205-008.B



ELECTRICAL CHARACTERISTICS (TJ =25°С, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS = 0V, ID = 250μA

700

Drain-Source Leakage Current

IDSS

VDS = 700V, VGS = 0V

μA

Gate-Source Leakage Current

Forward

IGSS

VGS = 30V, VDS = 0V

100

Reverse

VGS = -30V, VDS = 0V

-100

Breakdown Voltage Temperature

Coefficient

△

BVDSS △

/TJ ID = 250 μA, Referenced to 25°C

0.4

V/°С

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS = VGS, ID = 250μA

3.0

5.0

Static Drain-Source On-State Resistance

RDS(ON)

VGS = 10V, ID =1.0A

5.5

Ω

DYNAMIC CHARACTERISTICS

Input Capacitance

CISS

VDS =25V, VGS =0V, f =1MHz

258

Output Capacitance

COSS

Reverse Transfer Capacitance

CRSS

4.6

SWITCHING CHARACTERISTICS

Turn-On Delay Time

tD (ON)

VDD=30V, ID =0.5A, RG =25Ω

(Note 1, 2)

39.5

Turn-On Rise Time

38.5

Turn-Off Delay Time

tD(OFF)

Turn-Off Fall Time

Total Gate Charge

VDS=50V, ID=1.3A, VGS=10V

(Note 1, 2)

10.4

Gate-Source Charge

QGS

5.3

Gate-Drain Charge

QGD

2.0

DRAIN-SOURCE DIODE CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS = 0 V, ISD = 2.0 A

1.4

Continuous Drain-Source Current

ISD

2.0

Pulsed Drain-Source Current

ISM

8.0

Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2%

2. Essentially independent of operating temperature

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