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TPS53353 データシート(PDF) 25 Page - Texas Instruments |
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TPS53353 データシート(HTML) 25 Page - Texas Instruments |
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25 / 37 page ![]() - = ´ OUT VFB VFB V V R1 R2 V + = + INJ _ SW INJ _ OUT VFB V V V 0.6 2 ( ) ( ) = ´ + ´ ´ IND ripple INJ _ OUT IND ripple OUT SW I V ESR I 8 C f - = ´ ´ IN OUT INJ _ SW SW V V D V R7 C1 f ´ > ´ ´ OUT ON L C t N R7 C1 2 TPS53353 www.ti.com SLUSAK2B – AUGUST 2011 – REVISED FEBRUARY 2015 where • N is the coefficient to account for L and COUT variation. (16) N is also used to provide enough margin for stability. It is recommended N = 2 for VOUT ≤ 1.8 V and N = 4 for VOUT ≥ 3.3 V or when L ≤ 250 nH. The higher VOUT needs a higher N value because the effective output capacitance is reduced significantly with higher DC bias. For example, a 6.3-V, 22-µF ceramic capacitor may have only 8 µF of effective capacitance when biased at 5 V. Because the VFB pin voltage is regulated at the valley, the increased ripple on the VFB pin causes the increase of the VFB DC value. The AC ripple coupled to the VFB pin has two components, one coupled from SW node and the other coupled from the VOUT pin and they can be calculated using Equation 17 and Equation 18 when neglecting the output voltage ripple caused by equivalent series inductance (ESL). (17) (18) It is recommended that VINJ_SW to be less than 50 mV. If the calculated VINJ_SW is higher than 50 mV, then other parameters must be adjusted to reduce it. For example, COUT can be increased to satisfy Equation 16 with a higher R7 value, thereby reducing VINJ_SW. The DC voltage at the VFB pin can be calculated by Equation 19: (19) And the resistor divider value can be determined by Equation 20: (20) 8.2.2.3 Application Curves Figure 42. Enable Turnon Figure 43. Enable Turnoff Copyright © 2011–2015, Texas Instruments Incorporated Submit Documentation Feedback 25 Product Folder Links: TPS53353 |
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