CS5304

http://onsemi.com

2

R12

20 K

COMP

CS1

CS2

CS3

PWRGD

PWRGDS

Gate(L)1

GND1

Gate(H)1

Gate(H)2

GND2

Gate(L)2

Gate(L)3

GND3

Gate(H)3

REF

LGND

R1

3.09 k

R2

1.40 k

C5

0.1 mF

R7

30 k

CS2

C8

.01 mF

C7

.01 mF

CS3

R6

30 k

CS1

C6

.01 mF

R5

30 k

C9

.01 mF

PWRGD

10 k

R9

19.1 k

R8

80.6 k

Q3

Q4

CS2

L2

1.0 mF

Q5

Q6

CS3

L3

1.0 mF

Q1

Q2

CS1

L1

1.0 mF

C25−32

8 × 10 mF

C17−24

8 × 4SP560M

C14

1.0 mF

+5.0 V

2 × 16SP180M

C15,16

300 nH

L4

+12 V

+

C2

1.0 mF

C3

1.0 mF

C1

1.0 mF

+5.0 V

BAT54S

D1

U1

R3

56.2 K

0.1 mF

C4

R10

10 K

C12

1.0 nF

C11

1.0 nF

+12 V

D2

BAS16LT1

Figure 1. Application Diagram for Intel Pentium® 4 Processor 12 V to 1.7 V, 42 A

C10

470 pF

+5.0 V

R11

1.0 W

R4

BAT54S

D3

Q1−Q6, NTB85N03 or NTB85N03T4 by ON Semiconductor

MAXIMUM RATINGS*

Rating

Value

Unit

Operating Junction Temperature

150

°C

Storage Temperature Range

−65 to +150

°C

ESD Susceptibility (Human Body Model)

2.0

kV

14

°C/W

70

°C/W

Lead Temperature Soldering:

Reflow: (SMD styles only) (Note 1)

230 peak

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect

device reliability.

1. 60 second maximum above 183°C.

*The maximum package power dissipation must be observed.