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KAI-08050 データシート(PDF) 7 Page - ON Semiconductor |
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KAI-08050 データシート(HTML) 7 Page - ON Semiconductor |
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7 / 31 page  KAI−08050 www.onsemi.com 7 IMAGING PERFORMANCE Table 4. TYPICAL OPERATION CONDITIONS Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions. Description Condition Notes Light Source Continuous red, green and blue LED illumination For monochrome sensor, only green LED used. Operation Nominal operating voltages and timing Table 5. SPECIFICATIONS All Configurations Description Symbol Min. Nom. Max. Units Sampling Plan Temperature Tested At (5C) Notes Dark Field Global Non−Uniformity DSNU − − 2 mVpp Die 27, 40 Bright Field Global Non−Uniformity − 2 5 %rms Die 27, 40 1 Bright Field Global Peak to Peak Non−Uniformity PRNU − 5 15 %pp Die 27, 40 1 Bright Field Center Non−Uniformity − 1 2 %rms Die 27, 40 1 Maximum Photoresponse Nonlin- earity NL − 2 − % Design 2 Maximum Gain Difference Between Outputs DG − 10 − % Design 2 Maximum Signal Error due to Nonlinearity Differences DNL − 1 − % Design 2 Horizontal CCD Charge Capacity HNe − 55 − ke− Design Vertical CCD Charge Capacity VNe − 40 − ke− Design Photodiode Charge Capacity PNe − 20 − ke− Die 27, 40 3 Horizontal CCD Charge Transfer Efficiency HCTE 0.999995 0.999999 − Die Vertical CCD Charge Transfer Efficiency VCTE 0.999995 0.999999 − Die Photodiode Dark Current Ipd − 7 70 e/p/s Die 40 Vertical CCD Dark Current Ivd − 100 300 e/p/s Die 40 Image Lag Lag − − 10 e− Design Antiblooming Factor Xab 300 − − Design Vertical Smear Smr − −100 − dB Design Read Noise ne−T − 12 − e−rms Design 4 Dynamic Range DR − 64 − dB Design 4, 5 Output Amplifier DC Offset Vodc − 9.4 − V Die 27, 40 Output Amplifier Bandwidth f−3db − 250 − MHz Die 6 Output Amplifier Impedance ROUT − 127 − W Die 27, 40 Output Amplifier Sensitivity DV/DN − 34 − mV/e− Design 1. Per color 2. Value is over the range of 10% to 90% of photodiode saturation. 3. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value of VAB is set such that the photodiode charge capacity is 680 mV. 4. At 40 MHz 5. Uses 20LOG (PNe/ ne−T) 6. Assumes 5 pF load. |
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