NCE0213 datasheet(1/7 Pages) NCEPOWER

部品番号	NCE0213

部品情報	NCE N-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

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メーカー	NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]

ホームページ	http://www.ncepower.com

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NCE0213

Pb Free Product

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Wuxi NCE Power Co., Ltd

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v1.0

1

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE0213 uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

●

VDS = 200V,ID =13A

RDS(ON) <140mΩ @ VGS=10V (Typ:123mΩ)

●

High density cell design for ultra low Rdson

●

Fully characterized avalanche voltage and current

●

Good stability and uniformity with high EAS

●

Excellent package for good heat dissipation

Application

●

Boost converters

●

LED backlighting

●

Uninterruptible power supply

100% UIS TESTED!

100% ∆Vds TESTED!

Schematic diagram

Marking and pin assignment

TO-220-3L top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE0213

TO-220-3L

-

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Limit

Unit

VDS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current-Continuous

13

A

ID (100℃)

Drain Current-Continuous(TC=100℃)

9

A

IDM

Pulsed Drain Current

45

A

PD

Maximum Power Dissipation

95

W

Derating factor

0.6

W/℃

EAS

Single pulse avalanche energy

(Note 5)

200

mJ

TJ,TSTG

Operating Junction and Storage Temperature Range

-55 To 175

℃

同様の部品番号 - NCE0213

メーカー	部品番号	データシート	部品情報
Wuxi NCE Power Semicond...	NCE0218	368Kb / 7P	NCE N-Channel Enhancement Mode Power MOSFET
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同様の説明 - NCE0213

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NCE0213 データシート(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

NCE0213 データシート(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

同様の部品番号 - NCE0213

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NCE0213 データシート(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

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同様の部品番号 - NCE0213

同様の説明 - NCE0213

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