Wuxi NCE Power Co., Ltd

Page

v1.0

2

NCE0213

Pb Free Product

http://www.ncepower.com

Thermal Characteristic

Thermal Resistance, Junction-to-Case

(Note 2)

1.6

/W

℃

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

200

-

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

2

3

4

V

Drain-Source On-State Resistance

-

123

140

mΩ

Forward Transconductance

-

6

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

2000

-

PF

Output Capacitance

-

260

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

150

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

11.5

-

nS

Turn-on Rise Time

-

22

-

nS

Turn-Off Delay Time

-

18

-

nS

Turn-Off Fall Time

-

10

-

nS

Total Gate Charge

-

27

-

nC

Gate-Source Charge

-

4.4

-

nC

Gate-Drain Charge

-

11.6

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-

1.2

V

Diode Forward Current

(Note 2)

-

-

-

13

A

Reverse Recovery Time

-

32

-

nS

Qrr

Reverse Recovery Charge

TJ = 25°C, IF = 8A

di/dt = 100A/μs

(Note3)

-

53

-

nC

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

5. EAS condition : Tj=25 ,V