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L9779WD データシート(PDF) 41 Page - STMicroelectronics |
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L9779WD データシート(HTML) 41 Page - STMicroelectronics |
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41 / 170 page  DocID027452 Rev 5 41/170 L9779WD Functional description 169 Capacitor legend: 1H 50 V 1E 25 V 1C 16 V X7R -40 to 125 °C ±15% K -40 to 125 °C ±10% Note: Others N-MOSFET can be used provided that they have similar threshold voltage and input capacitance; however regulator transient performances may have deviation to be checked. PCB layout Note: The Cin capacitor on VB line should be put as close as possible to the drain of external MOS. The suggestion PCB layout is as below. Figure 17. Circuit and PCB layout suggested V3V3 CV3V3 External V3V3 capacitor 1 µF - 10 µF C2012X7R1E105K--1 µF C1608X7R1C105K--1 µF C3216X7R1H105K--1 µF C3225X7R1E106K--10 µF C3225X7R1C106K--10 µF CP CP External charge pump capacitor -20% 100nF +20% - Table 13. Voltage regulators external components required (continued) Pin Symbol Parameter Min Typ Max Suggested part number |
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