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C2M1000170D データシート(PDF) 3 Page - Cree, Inc

部品番号 C2M1000170D
部品情報  Silicon Carbide Power MOSFET
PDF  10 Pages
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メーカー  CREE [Cree, Inc]
ホームページ  http://www.cree.com/
Logo CREE - Cree, Inc

C2M1000170D データシート(HTML) 3 Page - Cree, Inc

  C2M1000170D_15 Datasheet HTML 1Page - Cree, Inc C2M1000170D_15 Datasheet HTML 2Page - Cree, Inc C2M1000170D_15 Datasheet HTML 3Page - Cree, Inc C2M1000170D_15 Datasheet HTML 4Page - Cree, Inc C2M1000170D_15 Datasheet HTML 5Page - Cree, Inc C2M1000170D_15 Datasheet HTML 6Page - Cree, Inc C2M1000170D_15 Datasheet HTML 7Page - Cree, Inc C2M1000170D_15 Datasheet HTML 8Page - Cree, Inc C2M1000170D_15 Datasheet HTML 9Page - Cree, Inc Next Button
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C2M1000170D Rev. E, 10-2015
0.0
0.5
1.0
1.5
2.0
2.5
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Conditions:
IDS = 2 A
VGS = 20 V
tp < 200 µs
0
1
2
3
4
5
6
0
4
8
12
16
20
Drain-Source Voltage, VDS (V)
Conditions:
TJ = 150 °C
tp < 200 µs
VGS = 20 V
VGS = 10 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
0
1
2
3
4
5
6
0
4
8
12
16
20
Drain-Source Voltage, VDS (V)
Conditions:
TJ = -55 °C
tp < 200 µs
VGS = 20 V
VGS = 10 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
0
1
2
3
4
5
6
0
4
8
12
16
20
Drain-Source Voltage, VDS (V)
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 20 V
VGS = 10 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
VGS = 12 V
Figure 2. Output Characteristics TJ = 25 °C
Typical Performance
Figure 1. Output Characteristics TJ = -55 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
1
2
3
4
5
6
Drain-Source Current, IDS (A)
Conditions:
VGS = 20 V
tp < 200 µs
TJ = 150 °C
TJ = -55 °C
TJ = 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Conditions:
IDS = 2 A
tp < 200 µs
VGS = 20 V
VGS = 18 V
VGS = 16 V
VGS = 14 V
Figure 3. Output Characteristics TJ = 150 °C
Figure 4. Normalized On-Resistance vs. Temperature
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures



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