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ABBTM-NVC-MDCS56 データシート(PDF) 3 Page - Abracon Corporation |
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ABBTM-NVC-MDCS56 データシート(HTML) 3 Page - Abracon Corporation |
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3 / 15 page ![]() Bluetooth Module ABRACON IS ISO 9001 / QS 9000 CERTIFIED ABRACON IS ISO 9001:2008 CERTIFIED 30332Esperanza, Rancho Santa Margarita, California 92688 tel 949-546-8000 | fax 949-546-8001| www.abracon.com Visit www.abracon.com for Terms & Conditions of Sale | | | | | | | | | | | | | | | Pb RoHS/RoHS II compliant ELECTRICAL CHARACTERISTICS Absolute Maximum Rating Rating Min Max Unit Storage Temperature -40 +125 °C Operating Temperature Range -40 +85 °C PIO Voltage -0.4 +3.6 V AIO voltage -0.4 +1.57 V VDD Voltage -0.4 +3.6 V USB_DP/USB_DN Voltage -0.4 +3.6 V Other Terminal Voltages except RF -0.4 VDD+0.4 V Recommended Operating Conditions Operating Condition Min Typ Max Unit Storage Temperature -40 +105 °C Operating Temperature Range -40 +85 °C PIO voltage +1.7 +3.3 +3.6 V AIO Voltage +1.42 +1.5 +1.57 V VDD Voltage +2.7 +3.3 +3.6 V Digital Term nals Supply Voltage Levels Min Typ Max Unit Input Voltage Levels VIL input logic level low -0.3 0.25*VDD V VIH input logic level high 0.625*VDD VDD + 0.3 V Output Voltage Levels VOL output logic level low, IOL = 4.0mA 0.125 V VOH output logic level high, IOH = -4.0mA 0.75*VDD VDD V Input and Tri-state Current Ii input leakage current at Vin = VDD or 0V -100 0 100 nA Ioz tri-state output leakage current at Vin = VDD or 0V -100 0 100 nA With strong pull-up -100 -40 -10 μA With strong pull-down 10 40 100 μA With weak pull-up -5.0 -1.0 -0.2 μA With weak pull-down -0.2 +1.0 5.0 μA CI Input Capacitance 1.0 5.0 pF Resistive Strength Rpuw weak pull-up strength at VDD-0.2V 500 2000 kΩ Rpdw weak pull-down strength at 0.2V 500 2000 kΩ Rpus strong pull-up strength at VDD-0.2V 10 50 kΩ Rpds strong pull-down strength at VDD-0.2V 10 50 kΩ INPUT / OUTPUT TERMINAL CHARACTERISTICS Revised: 08.14.13 ABBTM-NVC-MDCS56 23.24 x 11.93 x 2.05 mm SMT |
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