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BUX22 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited

部品番号 BUX22
部品情報  isc Silicon NPN Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX22 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUX22 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX22 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
BUX22
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS )*
Collector-Emitter Sustaining Voltage
IC=50mA ; IB=0
250
V
VCE(sat)-1*
Collector-Emitter Saturation Voltage
IC= 10A; IB=1.0A
1.0
V
VCE(sat)-2*
Collector-Emitter Saturation Voltage
IC= 20A; IB=2.5A
1.5
V
VBE(sat)*
Base-Emitter Saturation Voltage
IC= 20A; IB=2.5A
1.5
V
ICEO
Collector Cutoff Current
VCE=200V; IB=0
3
mA
ICEX
Collector Cutoff Current
VCE= 300V; VBE(off)= 1.5V
VCE= 300V; VBE(off)= 1.5V,TC=125℃
3
12
mA
ICBO
Collector Cutoff Current
VCB= 300V; IC=0
1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
1
mA
hFE-1*
DC Current Gain
IC= 10A ; VCE= 4V
20
60
hFE-2*
DC Current Gain
IC= 20A ; VCE= 4V
10
Is/b
Second Breakdown Collector
Current with Base Forward Biased
VCE= 140V,t= 1.0s,Nonrepetitive
0.15
A
fT
Current Gain-Bandwidth Product
IC= 2A ; VCE= 15V;f=1.0MHz
10
MHz
*:Pulse test PW≤300us,duty cycle≤2%
Switching times Resistive Load
ton
Turn-on Time
IC= 20A ;IB1=-IB2= 2.5A; VCC= 100V;
1.3
μ
s
ts
Storage Time
2.0
μ
s
tf
Fall Time
0.5
μ
s



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