BUX22 datasheet(1/2 Pages) ISC

部品番号	BUX22

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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isc Product Specification

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1

isc Silicon NPN Power Transistor

BUX22

DESCRIPTION

·

Fast Switching Speed

·

High DC Current Gain-hFE=20~60@IC = 10A

·

Low Saturation Voltage-

VCE(sat)= 1.0V(Max)@ IC = 10A

APPLICATIONS

·

Designed for use in motor control and switching

circuits applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.5

℃

/W

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEX

Collector-Emitter Voltage

(VBE= -1.5V)

300

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

40

A

ICM

Collector Current-Peak

50

A

IB

Base Current-Continuous

8

A

PC

Collector Power Dissipation @TC=25℃

350

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

同様の部品番号 - BUX22

メーカー	部品番号	データシート	部品情報
Seme LAB	BUX22	11Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
New Jersey Semi-Conduct...	BUX22	99Kb / 3P	HIGH CURRENT NPN SILICON TRANSISTOR
STMicroelectronics	BUX22	43Kb / 4P	HIGH CURRENT NPN SILICON TRANSISTOR Jun-1997

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