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2SB626 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB626 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor 2SB626 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -1mA; IC= 0 -8 V V(BR)CBO Collector-Base breakdown voltage IC=-1mA; IE= 0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -1.0 V VBE(on) Base-Emitter On Voltage IC= -1A; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -120V; IE= 0 -100 μ A ICEO Collector Cutoff Current VCE= -120V; IB= 0 -100 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μ A hFE -1 DC Current Gain IC= -1A; VCE= -5V 40 200 hFE -2 DC Current Gain IC= -6A; VCE= -5V 20 fT Current-Gain—Bandwidth Product IC=-0.5A ; VCE= -10V 6 MHz |
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