2SB626 datasheet(1/2 Pages) ISC

部品番号	2SB626

部品情報	isc Silicon PNP Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc website：www.iscsemi.com

isc & iscsemi is registered trademark

1

isc Silicon PNP Power Transistor

2SB626

DESCRIPTION

·

Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -120V(Min)

·

Low Collector Saturation Voltage-

: VCE(sat)= -1.0V(Max.) @IC= -6A

·

Wide area of safe operation

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Designed for general-purpose switching and amplifier

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-120

V

VCEO

Collector-Emitter Voltage

-120

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-6

A

PC

Collector Power Dissipation

@Tc=25℃

80

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

同様の部品番号 - 2SB626

メーカー	部品番号	データシート	部品情報
New Jersey Semi-Conduct...	2SB626	127Kb / 2P	Silicon PNP Power Transistor

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