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SST11CP16 データシート(PDF) 2 Page - Microchip Technology |
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SST11CP16 データシート(HTML) 2 Page - Microchip Technology |
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2 / 14 page ![]() ©2013 Silicon Storage Technology, Inc. DS70005050B 9/14 2 5.1-5.9 GHz High-Linearity Power Amplifier SST11CP16 Data Sheet Product Description SST11CP16 is a high-linearity power amplifier with low power consumption and is based on the highly- reliable InGaP/GaAs HBT technology. It can be easily configured for high-linearity, high-efficiency applications, with superb power-added efficiency, while operating over the 802.11a frequency band for U.S. and European markets (5.1-5.9 GHz). SST11CP16 has excellent linearity, typically ~3% added EVM at 21.5 dBm output power for 54 Mbps 802.11a operation, at 5.0V, while meeting 802.11a spectrum mask at 25 dBm. SST11CP16 provides 19 dBm with less than 1.8% EVM, using 802.11ac modulation with 80 MHz bandwidth and 351 Mbps data rate. This power amplifier also provides a wide dynamic-range, linear power detector that is temperature and VSWR insensitive. This integrated power detector can lower the cost of power control. The power amplifier IC also features easy board-level operation along with high-speed power-up/- down control. Low reference current (total IREF <8 mA) makes the SST11CP16 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST11CP16 ideal for the final stage power amplification in 802.11a/n/ac WLAN transmitter applications. The SST11CP16 is offered in 16-contact XQFN package with 0.5 mm maximum thickness. See Figure 2 for pin assignments and Table 1 for pin descriptions. |
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