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SST25WF040B データシート(PDF) 21 Page - Microchip Technology |
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SST25WF040B データシート(HTML) 21 Page - Microchip Technology |
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21 / 39 page ![]() 2014 Microchip Technology Inc. DS20005193C-page 21 SST25WF040B 6.1 Power-Up Specifications All functionalities and DC specifications are specified for a VDD ramp rate of greater than 1V per 100 ms (0V to 1.8V in less than 180 ms). See Table 6-3 and Figure 6-2 for more information. FIGURE 6-1: POWER-UP TIMING DIAGRAM TABLE 6-3: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. VDD Min to Read Operation 500 μs TPU-WRITE1 VDD Min to Write Operation 500 μs Time VDD Min VDD Max VDD Device fully accessible TPU-READ TPU-WRITE Chip selection is not allowed. Commands may not be accepted or properly interpreted by the device. |
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