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SST25WF040B データシート(PDF) 13 Page - Microchip Technology

部品番号 SST25WF040B
部品情報  4 Mbit 1.8V SPI Serial Flash
PDF  39 Pages
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メーカー  MICROCHIP [Microchip Technology]
ホームページ  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST25WF040B データシート(HTML) 13 Page - Microchip Technology

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 2014 Microchip Technology Inc.
DS20005193C-page 13
SST25WF040B
5.5
Page-Program
The Page-Program instruction programs up to 256
Bytes of data in the memory. The data for the selected
page address must be in the erased state (FFH) before
initiating the Page-Program operation. A Page-Pro-
gram applied to a protected memory area will be
ignored. Prior to the program operation, execute the
WREN instruction.
To execute a Page-Program operation, the host drives
CE# low, then sends the Page-Program command
cycle (02H), three address cycles, followed by the data
to be programmed, and then drives CE# high. The pro-
grammed data must be between 1 to 256 Bytes and in
whole byte increments; sending less than a full byte will
cause the partial byte to be ignored. Poll the BUSY bit
in the Status register, or wait TPP, for the completion of
the internal, self-timed, Page-Program operation. See
Figure 5-5 for the Page-Program sequence and Figure
6-8 for the Page-Program flow chart.
When executing Page-Program, the memory range for
the SST25WF040B is divided into 256-Byte page
boundaries. The device handles the shifting of more
than 256 Bytes of data by maintaining the last 256
Bytes as the correct data to be programmed. If the tar-
get address for the Page-Program instruction is not the
beginning of the page boundary (A[7:0] are not all
zero), and the number of bytes of data input exceeds or
overlaps the end of the address of the page boundary,
the excess data inputs wrap around and will be pro-
grammed at the start of that target page.
FIGURE 5-5:
PAGE-PROGRAM SEQUENCE
20005193 F60.1
CE#
SO
SI
SCK
ADD.
01 2 3 4 5 6 7 8
ADD.
ADD.
Data Byte 0
02
HIGH IMPEDANCE
15 16
23 24
31 32
39
MODE 0
MODE 3
MSB
MSB
MSB
LSB
CE#(cont’)
SO(cont’)
SI(cont’)
SCK(cont’)
40 41 42 43 44 45 46
47 48
Data Byte 1
HIGH IMPEDANCE
MSB
MSB
MSB
LSB
50 51 52 53 54 55
49
Data Byte 2
Data Byte 255
LSB
LSB
LSB
LSB



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