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2SD1355 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1355 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1355 DESCRIPTION · Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 4A · Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V (Min) · Complement to Type 2SB995 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Power amplifier applications. · Recommended for 30W high-fidelity audio frequency amplifier output stage. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ TC=25℃ 40 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
同様の部品番号 - 2SD1355 |
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同様の説明 - 2SD1355 |
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