STB24N65M2 datasheet(1/20 Pages) STMICROELECTRONICS

部品番号	STB24N65M2

部品情報	Extremely low gate charge

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メーカー	STMICROELECTRONICS [STMicroelectronics]

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1 / 20 page

November 2014

DocID026475 Rev 2

1/20

This is information on a product in full production.

www.st.com

STB24N65M2, STF24N65M2,

STP24N65M2

N-

channel 650 V, 0.185 Ω typ., 16 A MDmesh M2

Power MOSFET in D2PAK, TO-220FP and TO-220 packages

Datasheet - production data

Figure 1: Internal schematic diagram

Features

Order codes

VDS

RDS(on) max

ID

STB24N65M2

650 V

0.23 Ω

16 A

STF24N65M2

STP24N65M2



Extremely low gate charge



Excellent output capacitance (Coss) profile



100% avalanche tested



Zener-protected

Applications



Switching applications

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters.

Table 1: Device summary

Order codes

Marking

Package

Packaging

STB24N65M2

24N65M2

D2PAK

Tape and

reel

STF24N65M2

TO-220FP

Tube

STP24N65M2

TO-220

同様の部品番号 - STB24N65M2

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	STB24N65M2	349Kb / 2P	isc N-Channel MOSFET Transistor

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