STD12N65M2 datasheet(4/16 Pages) STMICROELECTRONICS

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Electrical characteristics

STD12N65M2

4/16

DocID027317 Rev 2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 5: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

VGS = 0 V, ID = 1 mA

650

IDSS

Zero gate voltage drain

current

V GS= 0 V, VDS = 650 V

µA

VGS = 0 V, VGSDS = 650 V

TC = 125 °C

100

µA

IGSS

Gate-body leakage current

VDS = 0 V, VGS = ±25 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 4 A

0.42

0.5

Table 6: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VGS = 0 V, VDS= 100 V,

f = 1 MHz

535

Coss

Output capacitance

Crss

Reverse transfer

capacitance

1.1

Coss eq.

(1)

Equivalent output

capacitance

VGS = 0 V, VDS = 0 to 520 V

144

Intrinsic gate resistance

f = 1 MHz, open drain

Total gate charge

VDD = 520 V, ID = 8 A,

VGS = 10 V (see Figure 15:

"Gate charge test circuit")

16.5

Qgs

Gate-source charge

2.6

Qgd

Gate-drain charge

8.5

Notes:

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

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