STD12N65M2 datasheet(5/16 Pages) STMICROELECTRONICS

5 / 16 page

STD12N65M2

Electrical characteristics

DocID027317 Rev 2

5/16

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on

delay time

VDD = 325 V, ID = 4 A, RG = 4.7 Ω, VGS = 10 V

(see Figure 14: "Switching times test circuit

for resistive load" and Figure 19: "Switching

time waveform")

Rise time

td(off)

Turn-off-

delay time

Fall time

13.5

Table 8: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain

current

ISDM

(1)

Source-drain

current

(pulsed)

VSD

(2)

Forward on

voltage

VGS = 0 V, ISD = 8 A

1.6

trr

Reverse

recovery time

ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V

(see Figure 16: " Test circuit for inductive

load switching and diode recovery times")

313

Qrr

Reverse

recovery

charge

2.7

µC

IRRM

Reverse

recovery

current

trr

Reverse

recovery time

ISD = 8 A, di/dt = 100 A/µs, VDD = 60 V,

Tj = 150 °C (see Figure 16: " Test circuit

for inductive load switching and diode

recovery times")

462

Qrr

Reverse

recovery

charge

4.1

µC

IRRM

Reverse

recovery

current

17.5

Notes:

(1)

Pulse width is limited by safe operating area

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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