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STF6N65M2 データシート(PDF) 1 Page - STMicroelectronics |
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STF6N65M2 データシート(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. August 2014 DocID026776 Rev 1 1/18 STF6N65M2, STP6N65M2, STU6N65M2 N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2 Power MOSFETs in TO-220FP, TO-220 and IPAK packages Datasheet - preliminary data Figure 1. Internal schematic diagram Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. TO-220 TO-220FP IPAK 1 2 3 1 2 3 TAB 3 2 1 TAB AM15572v1 , TAB Order codes VDS RDS(on) max ID STF6N65M2 650 V 1.35 Ω 4 A STP6N65M2 STU6N65M2 Table 1. Device summary Order codes Marking Package Packaging STF6N65M2 6N65M2 TO-220FP Tube STP6N65M2 TO-220 STU6N65M2 IPAK www.st.com |
同様の部品番号 - STF6N65M2 |
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同様の説明 - STF6N65M2 |
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