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STF12N60M2 データシート(PDF) 1 Page - STMicroelectronics |
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STF12N60M2 データシート(HTML) 1 Page - STMicroelectronics |
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1 / 13 page  May 2015 DocID027908 Rev 1 1/13 This is information on a product in full production. www.st.com STF12N60M2 N-channel 600 V, 0. 395 Ω typ., 9 A MDmesh™ M2 Power MOSFET in a TO-220FP package Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID PTOT STF12N60M2 600 V 0. 450 Ω 9 A 25 W • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100% avalanche tested • Zener-protected Applications • Switching applications Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Table 1: Device summary Order code Marking Package Packing STF12N60M2 12N60M2 TO-220FP Tube TO-220FP 1 2 3 AM15572v1_no_tab D(2) G(1) S(3) |
同様の部品番号 - STF12N60M2 |
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同様の説明 - STF12N60M2 |
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