STF12N60M2

Electrical ratings

DocID027908 Rev 1

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1

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

Gate-source voltage

±25

V

ID

(1)

9

A

5.7

IDM

(2)

Drain current (pulsed)

36

A

25

W

dv/dt

(3)

Peak diode recovery voltage slope

15

V/ns

dv/dt

(4)

MOSFET dv/dt ruggedness

50

Insulation withstand voltage (RMS) from all three leads

2.5

kV

Storage temperature

-55 to 150

°C

Maximum junction temperature

150

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width is limited by safe operating area.

(3)

(4)

≤ 480 V.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Thermal resistance junction-case

5

°C/W

Thermal resistance junction-ambient

62.5

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

(1)

Avalanche current, repetitive or not repetitive

2.6

A

EAR

(2)

Single pulse avalanche energy

117

mJ

Notes:

(1)

(2)