STFI15N60M2-EP datasheet(5/15 Pages) STMICROELECTRONICS

5 / 15 page

STF15N60M2-EP, STFI15N60M2-EP

Electrical characteristics

DocID027373 Rev 1

5/15

Table 8: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 300 V, ID = 5.5 A

RG = 4.7 Ω, VGS = 10 V (see

Figure 14: "Switching times

test circuit for resistive load"

and Figure 19: "Switching

time waveform" )

Rise time

td(off)

Turn-off-delay time

Fall time

Table 9: Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

(1)

Source-drain current

ISDM

(2)

Source-drain current (pulsed)

VSD

(3)

Forward on voltage

VGS = 0 V, I = 11 A

1.6

trr

Reverse recovery time

ISD = 11 A, di/dt = 100 A/µs,

VDD = 60 V (see Figure 16: "

Test circuit for inductive load

switching and diode

recovery times" )

280

Qrr

Reverse recovery charge

2.7

µC

IRRM

Reverse recovery current

19.5

trr

Reverse recovery time

ISD = 11 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 16: " Test circuit

for inductive load switching

and diode recovery times")

400

Qrr

Reverse recovery charge

3.8

µC

IRRM

Reverse recovery current

Notes:

(1)

Limited by maximum junction temperature.

(2)

Pulse width is limited by safe operating area.

(3)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%.

STFI15N60M2-EP データシート(PDF) 5 Page - STMicroelectronics

STFI15N60M2-EP データシート(HTML) 5 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

データシートダウンロード